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Same model may have multiple batches, images only for reference.
SIR168DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR168DP-T1-GE3

Part No SIR168DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
SIR168DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 2040pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 34.7W (Tc)
Maximum Rds On at Id,Vgs 4.4 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 211726-SIR168DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR168DP-T1-GE3 CAD Model

Description

The Vishay MOSFET is designed with N-Channel polarity and has a power dissipation (Max) of 5W (Ta), 34.7W (Tc).

  • Polarity: N-Channel
  • Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 4.4 mOhm @ 15A, 10V
  • Manufacturer: Vishay
  • Win Source Part Number: 211726-SIR168DP-T1-GE3

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