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SIR180DP-T1-RE3

Part No SIR180DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 32.4A/60A PPAK
Datasheet
Sample
Rohs State rohs
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Win Source Part Number WS1197310-SIR180DP-T1-RE3
Win Source Part Number Cross
Manufacturer Vishay Siliconix
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series TrenchFET® Gen IV
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 32.4A (Ta), 60A (Tc)
Ultra Librarian 3D Model Ultra Librarian SIR180DP-T1-RE3 CAD Model

Description

The Vishay Siliconix TrenchFET Gen IV is a MOSFET transistor. It is an N-channel transistor with a drain-to-source voltage (Vdss) of 60V.

  • Channel Type: N-channel
  • Drain-to-Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C (Ta): 32.4A
  • Continuous Drain Current (Id) @ 25°C (Tc): 60A
  • Series: TrenchFET Gen IV
  • Package Options: Tape & reel, cut tape, and Digi-Reel
  • Application: Discrete semiconductor applications
  • Product Status: Active
  • Manufacturer: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7685 $53.0550
70+ $1.4511 $101.5770
110+ $1.4057 $154.6270
150+ $1.3604 $204.0600
195+ $1.3150 $256.4250
255+ $1.1790 $300.6450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,471 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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