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SIR186DP-T1-RE3

Part No SIR186DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 30 V
Power Dissipation (Max) 57W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR186
Other Names SIR186DP-T1-RE3DKR,SIR186DP-T1-RE3TR,SIR186DP-T1-RE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277644-SIR186DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR186DP-T1-RE3 CAD Model

Description

The SIR186DP-T1-RE3 MOSFET is an N-channel FET designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs.

  • Series: TrenchFET® Gen IV
  • Drain to Source Voltage: 60 V
  • Continuous Drain Current: 60A @ 25°C
  • On-Resistance: 4.5mOhm @ 15A and 10V
  • Gate Charge: 37 nC @ 10 V
  • Input Capacitance: 1710 pF @ 30 Vds
  • Power Dissipation: 57W @ Tc
  • Package: PowerPAK® SO-8
  • Mounting: SMD (SMT) technology
  • Drive Voltage: Maximum of 6V for max Rds on, and 10V for min Rds on

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9396 $52.9128
42+ $2.4120 $101.3040
65+ $2.3366 $151.8790
89+ $2.2612 $201.2468
115+ $2.1859 $251.3785
154+ $1.9598 $301.8092
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,340 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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