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SIR416DP-T1-GE3

Part No SIR416DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3350pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096468-SIR416DP-T1-GE3
Family Name SiR416DP
Introduction Date December 21, 2012
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SIR416DP-T1-GE3 CAD Model

Description

Vishay's SiR416DP MOSFET is a high-performance N-Channel transistor that is perfect for various electronic applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Maximum Rds On @ Id,Vgs: 3.8 mOhm @ 15A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 90nC @ 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting Type: SMD (SMT)
  • Package: PowerPAK SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $1.9783 $51.4358
62+ $1.6232 $100.6384
96+ $1.5725 $150.9600
132+ $1.5217 $200.8644
170+ $1.4710 $250.0700
228+ $1.3188 $300.6864
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,320 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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