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SIR426DP-T1-GE3

Part No SIR426DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 30A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1160pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.8W (Ta), 41.7W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 103367-SIR426DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIR426DP-T1-GE3 CAD Model

Description

The Vishay SIR426DP-T1-GE3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Polarity: N-channel
  • Power Dissipation: 4.8W @ Ta and 41.7W @ Tc
  • Drive Voltage: 4.5V
  • Minimum Rds on: 10V
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 30A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Input Capacitance: 1160pF @ 20V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds on @ Id,Vgs: 10.5 mOhm @ 15A, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8243 $53.5795
150+ $0.6763 $101.4450
230+ $0.6552 $150.6960
320+ $0.6341 $202.9120
410+ $0.6129 $251.2890
550+ $0.5495 $302.2250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,697 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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