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SIR622DP-T1-GE3

Name: SIR622DP-T1-GE3
Brand: Vishay
SKU: 810852
Availability: InStock
Rating: 4.91 (48 reviews)

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Part No	SIR622DP-T1-GE3
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET N-CH 150V 51.6A SO-8
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Vishay Siliconix
Packaging	Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) at 25°C	51.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Maximum) at Id, Vgs	17.7mOhm at 20A, 10V
Vgs(th) (Maximum) at Id	4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	31nC at 7.5V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1516pF at 75V
Power Dissipation (Maximum)	104W (Tc)
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	PowerPAK SO-8
Manufacturer Package	PowerPAK SO-8
Manufacturer Pack Quantity	3,000
MSL Level	1 (Unlimited)
Popularity	Medium
Supply and Demand Status	Limited
Win Source Part Number	810855-SIR622DP-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SIR622DP-T1-GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix SIR622DP-T1-GE3 is an N-Channel MOSFET.

Transistor Type: N-Channel MOSFET
Drain to Source Voltage: 150V
Maximum Power Dissipation (Tc): 104W
Maximum Rds On: 17.7mOhm @ 20A, 10V
Gate Charge @ 7.5V: 31nC
Input Capacitance @ 75V: 1516pF
Continuous Drain Current (Tc) @ 25°C: 51.6A
Vgs(th) @ 250μA: 4.5V
Package: PowerPAK SO-8

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
30+	$1.7205	$51.6150
75+	$1.4117	$105.8775
110+	$1.3676	$150.4360
155+	$1.3235	$205.1425
200+	$1.2794	$255.8800
265+	$1.1470	$303.9550

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 10,419 pieces

MOQ: 30 pcs

Order Increment : 1 pcs

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SIR622DP-T1-GE3

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