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SIR632DP-T1-RE3

Part No SIR632DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series ThunderFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 34.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 7.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 75 V
Power Dissipation (Max) 69.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR632
Other Names SIR632DP-T1-RE3TR,SIR632DP-T1-RE3CT,SIR632DP-T1-RE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277687-SIR632DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR632DP-T1-RE3 CAD Model

Description

The SIR632DP-T1-RE3 MOSFET is a high-performance N-channel transistor.

  • Drain-Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 29A @ 25°C
  • Drain-Source On-Resistance (Rds On): 34.5mOhm @ 10A and 10V
  • Package: PowerPAK SO-8
  • Gate Charge (Qg): 17nC @ 7.5V
  • Input Capacitance (Ciss): 740pF @ 75V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2697 $50.7880
100+ $1.0418 $104.1800
150+ $1.0093 $151.3950
205+ $0.9767 $200.2235
265+ $0.9442 $250.2130
355+ $0.8465 $300.5075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,410 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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