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Same model may have multiple batches, images only for reference.
SIR642DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR642DP-T1-GE3

Part No SIR642DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO EP T/R / MOSFET N-CH 40V 60A PPAK SO-8
Datasheet
SIR642DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 4155pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.8W (Ta), 41.7W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096474-SIR642DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name SiR642DP
Introduction Date October 11, 2012
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SIR642DP-T1-GE3 CAD Model

Description

The Vishay SiR642DP is an N-channel MOSFET electronic component that is active in the market.

  • Power Dissipation: 4.8W (Ta), 41.7W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 60A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Package: PowerPAK SO-8
  • Mounting: SMD (SMT)
  • Family Name: SiR642DP
  • Category: Discrete semiconductor products
  • ECCN: EAR99
  • REACH Effect: No

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60+ $1.9439 $116.6340
92+ $1.8838 $173.3096
127+ $1.8226 $231.4702
164+ $1.7625 $289.0500
220+ $1.5800 $347.6000
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