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SIR872ADP-T1-GE3

Part No SIR872ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 53.7A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 53.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 1286pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 110993-SIR872ADP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian SIR872ADP-T1-GE3 CAD Model

Description

The Vishay MOSFET is a high-performance, N-channel power MOSFET designed for power management applications in industrial settings.

  • Maximum Power Dissipation: 6.25W @ 25°C and 104W @ 150°C
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current @ 25°C: 53.7A
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds on at Id, Vgs: 18 mOhm @ 20A, 10V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0642 $52.0914
40+ $2.5143 $100.5720
62+ $2.4357 $151.0134
85+ $2.3571 $200.3535
110+ $2.2786 $250.6460
147+ $2.0428 $300.2916
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 83,850 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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