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SIR892DP-T1-GE3

Part No SIR892DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A PPAK SO-8 / Trans MOSFET N-CH 25V 50A 8-Pin PowerPAK SO EP T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 25V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.6V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2645pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 5W (Ta), 50W (Tc)
Rds On (Maximum) @ Id, Vgs 3.2 mOhm @ 10A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 794408-SIR892DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SiR892DP
Introduction Date July 29, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SIR892DP-T1-GE3 CAD Model

Description

The SiR892DP-T1-GE3 is a MOSFET transistor from Vishay Siliconix and has a PowerPAK SO-8 package.

  • Package: PowerPAK SO-8
  • Maximum Drain-Source Voltage: 25V
  • Continuous Drain Current: 50A
  • Gate-Source Threshold Voltage: 2.6V
  • Gate Charge @ 10V: 60nC
  • Input Capacitance @ 10V: 2645pF
  • Maximum Power Dissipation @ Ta: 5W
  • Maximum Power Dissipation @ Tc: 50W
  • Rds On @ 10A & 10V: 3.2 mOhm

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2867 $50.1725
425+ $0.2353 $100.0025
660+ $0.2279 $150.4140
910+ $0.2206 $200.7460
1,175+ $0.2132 $250.5100
1,570+ $0.1912 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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