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Same model may have multiple batches, images only for reference.
SIRA12DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIRA12DP-T1-GE3

Part No SIRA12DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 25A PPAK SO-8
Datasheet
SIRA12DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2070pF @ 15V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 4.5W (Ta), 31W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028768-SIRA12DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIRA12DP-T1-GE3 CAD Model

Description

The Vishay 028768-SIRA12DP-T1-GE3 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Packaging: reel - TR
  • Mounting: SMD (SMT)
  • Case / Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 25A (Tc)
  • Power Dissipation: 4.5W (Ta), 31W (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 45nC @ 10V
  • Maximum Rds On at Id,Vgs: 4.3 mOhm @ 10A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8342 $50.0520
150+ $0.6845 $102.6750
230+ $0.6631 $152.5130
315+ $0.6417 $202.1355
405+ $0.6204 $251.2620
540+ $0.5562 $300.3480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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