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Same model may have multiple batches, images only for reference.
SIRA18DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIRA18DP-T1-GE3

Part No SIRA18DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 33A PPAK SO-8
Datasheet
SIRA18DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 21.5nC @ 10V
Max Input Capacitance 1000pF @ 15V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 3.3W (Ta), 14.7W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 101919-SIRA18DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Communications & Networking
Ultra Librarian 3D Model Ultra Librarian SIRA18DP-T1-GE3 CAD Model

Description

The Vishay 101919-SIRA18DP-T1-GE3 is an N-channel MOSFET designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 33A (Tc) @ 25°C
  • Fault Protection: programmable fault protection for over temperature and over voltage
  • Supply and Demand Status: balanced
  • Applications: industrial, power management, communications, and networking

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4717 $51.8870
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3971 $200.5355
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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