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SIRA32DP-T1-RE3

Part No SIRA32DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 4450 pF @ 10 V
Power Dissipation (Max) 65.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA32
Other Names SIRA32DP-T1-RE3CT,SIRA32DP-T1-RE3DKR,SIRA32DP-T1-RE3TR,SIRA32DP-T1-RE3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277652-SIRA32DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIRA32DP-T1-RE3 CAD Model

Description

The Vishay SIRA32DP-T1-RE3 is an N-channel MOSFET designed for use in high-power switching applications.

  • Maximum Drain-Source Voltage: 25V
  • Continuous Drain Current: 60A @ 25°C
  • Maximum On-Resistance: 1.2mOhm @ 15A and 10V gate-source voltage
  • Gate Threshold Voltage: 2.2V @ 250µA
  • Gate Charge: 83 nC @ 10V
  • Package: PowerPAK® SO-8
  • Rated Temperature Range: -55°C to 150°C
  • Series: Vishay TrenchFET® Gen IV

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,430 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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