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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2455 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 5W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRC06
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIRC06DP-T1-GE3CT,SIRC06DP-T1-GE3TR,SIRC06DP-T1-GE3DKR
Standard Package 3,000
Win Source Part Number 1093105-SIRC06DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIRC06DP-T1-GE3 CAD Model

Description

The SIRC06DP-T1-GE3 is an N-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix.

  • Series: TrenchFET® Gen IV
  • Package: PowerPAK® SO-8
  • FET Type: N-Channel
  • Features: Schottky Diode (Body)
  • Drain to Source Voltage (Vdss): 30 V
  • Continuous Drain Current (Id): 32A (Ta), 60A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 15 V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

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