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SIS184DN-T1-GE3

Part No SIS184DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 17.4A (Ta), 65.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1490 pF @ 30 V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SIS184
Other Names SIS184DN-T1-GE3DKR,SIS184DN-T1-GE3CT,SIS184DN-T1-GE3TR,SIS184DN-GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277660-SIS184DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS184DN-T1-GE3 CAD Model

Description

The SIS184DN-T1-GE3 from Vishay Siliconix is a N-channel MOSFET transistor with a drain to source voltage (Vdss) of 60V and a continuous drain current (Id) of 17.4A (Ta), 65.3A (Tc).

  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
  • Gate Charge (Qg) @ Vgs: 32 nC @ 10 V
  • Package: PowerPAK 1212-8
  • Packaging: tape and reel
  • Package Quantity: 3,000
  • Rating: AEC-Q200
  • ECCN: EAR99
  • Operating Temperature: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5577 $54.5195
80+ $1.2781 $102.2480
125+ $1.2382 $154.7750
170+ $1.1983 $203.7110
220+ $1.1583 $254.8260
290+ $1.0385 $301.1650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,247 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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