The Vishay SiS434DN is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 40V and a Continuous Drain Current of 35A @ 25°C.

• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current: 35A @ 25°C
• Power Dissipation: 3.8W (Ta) and 52W (Tc)
• Gate-Source Threshold Voltage: 2.2V @ 250μA
• Max Gate Charge: 40nC @ 10V
• Max Input Capacitance: 1530pF @ 20V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On at Id,Vgs: 7.6 mOhm @ 16.2A, 10V
• Package: PowerPAK 1212-8
• Applications: Industrial and Power Management
• Popularity: popular and common-used
• Supply and Demand Status: sufficient
• Estimated EOL date: 2027