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SIS862DN-T1-GE3

Name: SIS862DN-T1-GE3
Brand: Vishay
SKU: 810853
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SIS862DN-T1-GE3
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET N-CH 60V 40A 1212
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Vishay Siliconix
Packaging	Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) at 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Maximum) at Id, Vgs	8.5mOhm at 20A, 10V
Vgs(th) (Maximum) at Id	2.6V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	32nC at 10V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1320pF at 30V
Power Dissipation (Maximum)	3.7W , 52W (Tc)
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	PowerPAK 1212-8
Manufacturer Package	PowerPAK 1212-8
Manufacturer Pack Quantity	3,000
MSL Level	1 (Unlimited)
Popularity	Medium
Supply and Demand Status	Limited
Win Source Part Number	810856-SIS862DN-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SIS862DN-T1-GE3 CAD Model

Alternative Products

Description

Vishay Siliconix's SIS862DN-T1-GE3 MOSFET is a high-performance, N-channel component designed for use in a wide range of applications.

Transistor Type: N-Channel MOSFET
Continuous Drain Current: 40A
Drain-Source Voltage: 60V
Package: PowerPAK 1212-8
Operating Temperature: -55°C to 150°C
Gate Charge @ 10V: 32nC
ECCN: EAR99

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
45+	$1.1140	$50.1300
110+	$0.9141	$100.5510
170+	$0.8855	$150.5350
235+	$0.8570	$201.3950
305+	$0.8284	$252.6620
405+	$0.7427	$300.7935

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 38,660 pieces

MOQ: 45 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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