The SISA72ADN-T1-GE3 is an N-Channel MOSFET that belongs to the TrenchFET® Gen IV series.

• Manufacturer: Vishay Siliconix
• Product: SISA72ADN-T1-GE3
• Channel Type: N-Channel
• Series: TrenchFET® Gen IV
• Drain to Source Voltage (Vdss): 40 V
• Power Dissipation: 3.7W (Ta), 52W (Tc)
• Mounting Type: Surface Mount
• Package/Case: PowerPAK® 1212-8
• Supplier Device Package: PowerPAK® 1212-8
• Vgs (Max): +20V, -16V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Drive Voltage: 4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc)
• Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V