The Vishay Siliconix SISS02DN-T1-GE3 is an N-channel MOSFET transistor with a drain-source voltage of 25V and a continuous drain current of 51A (Ta) and 80A (Tc) @ 25°C.

• Maximum Resistance (Drain to Source): 1.2mOhm @ 15A and 10V gate-source voltage
• Maximum Gate-Source Threshold Voltage: 2.2V @ 250µA
• Power Dissipation: 5W (Ta) and 65.7W (Tc)
• Mounting: SMD (SMT)
• Gate Charge: 83nC @ 10V
• Input Capacitance: 4450pF @ 10V
• Maximum Gate-Source Voltage: +16V and -12V
• Package/Case Size: PowerPAK® 1212-8S
• Supplier Device Package: PowerPAK® 1212-8S
• Operating Temperature: -55°C to 150°C (TJ)