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Same model may have multiple batches, images only for reference.
BSR315PH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSR315PH6327XTSA1

Part No BSR315PH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 620MA SC-59-3
Datasheet
BSR315PH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 620mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 160μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 176pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 800 mOhm @ 620mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-59
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024472-BSR315PH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSR315PH6327XTSA1 CAD Model

Description

The Infineon Technologies 1024472-BSR315PH6327XTSA1 is a P-Channel MOSFET transistor.

  • Package: TO-236-3, SC-59, SOT-23-3
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (Id): 620mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 160μA
  • Maximum Gate Charge: 6nC @ 10V
  • Maximum Rds On @ Id,Vgs: 800 mOhm @ 620mA, 10V

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560+ $0.2077 $116.3120
865+ $0.2012 $174.0380
1,190+ $0.1947 $231.6930
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2,055+ $0.1688 $346.8840
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