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SISS27ADN-T1-GE3

Part No SISS27ADN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 50A PPAK1212-8S
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET® Gen III
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4660 pF @ 15 V
Power Dissipation (Max) 57W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS27
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849559-SISS27ADN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS27ADN-T1-GE3 CAD Model

Description

The SISS27ADN-T1-GE3 is a P-channel MOSFET transistor from the TrenchFET® Gen III series.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 50A @ 25°C
  • On-Resistance (Rds On): 5.1mOhm @ 15A and 10V
  • Gate Threshold Voltage (Vgs(th)): 2.2V @ 250µA
  • Power Dissipation: 57W
  • Mounting Type: Surface Mountable
  • Package: PowerPAK® 1212-8S
  • Gate Charge (Qg): 55nC @ 4.5V
  • Input Capacitance (Ciss): 4660pF @ 15V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9235 $50.7925
135+ $0.7578 $102.3030
205+ $0.7341 $150.4905
285+ $0.7104 $202.4640
365+ $0.6867 $250.6455
490+ $0.6157 $301.6930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,940 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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