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Same model may have multiple batches, images only for reference.
SISS60DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SISS60DN-T1-GE3

Part No SISS60DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50.1/181.8A PPAK
Datasheet
SISS60DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 46 Weeks
Features N-Channel 30 V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Manufacturer Vishay
Series TrenchFET® Gen IV
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package PowerPAK® 1212-8S
Case / Package PowerPAK® 1212-8S
Family Name SISS60
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SISS60DN-T1-GE3TR, SISS60DN-T1-GE3DKR, SISS60DN-T1-GE3CT
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 933848-SISS60DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS60DN-T1-GE3 CAD Model

Description

The Vishay SISS60DN-T1-GE3 TrenchFET® Gen IV MOSFET is an N-channel polarity component that is commonly used in industrial power management.

  • Power Dissipation: 5.1W (Ta) and 65.8W (Tc)
  • Continuous Drain Current: 50.1A (Ta) and 181.8A (Tc)
  • Package: Surface mount PowerPAK® 1212-8S
  • Temperature Range: -55°C to 150°C
  • Packaging: reel-TR
  • Quantity per Package: 3000
  • Popularity: high popularity
  • Supply and Demand: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0006 $60.0360
145+ $0.8211 $119.0595
220+ $0.7953 $174.9660
305+ $0.7697 $234.7585
390+ $0.7441 $290.1990
520+ $0.6671 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,820 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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