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Same model may have multiple batches, images only for reference.
SQ4961EY-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQ4961EY-T1_GE3

Part No SQ4961EY-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET DUAL P-CHAN 60V SO8
Datasheet
SQ4961EY-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.4A (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1140pF @ 25V
Maximum Power Dissipation 3.3W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1101715-SQ4961EY-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQ4961EY-T1_GE3 CAD Model

Description

The Vishay 1101715-SQ4961EY-T1_GE3 is a P-channel dual FET transistor with a standard FET feature.

  • FET Type: P-channel Dual
  • FET Feature: Standard
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Power Dissipation: 3.3W
  • Continuous Drain Current at 25°C: 4.4A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1140pF @ 25V
  • Category: Discrete Semiconductor Products
  • Package: 8-SO
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0579 $52.8950
120+ $0.8681 $104.1720
180+ $0.8409 $151.3620
250+ $0.8138 $203.4500
320+ $0.7867 $251.7440
430+ $0.7053 $303.2790
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Availability: 2,500 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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