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Same model may have multiple batches, images only for reference.
SQD25N06-22L_T4GE3 Real Image
Same model may have multiple batches, images only for reference.

SQD25N06-22L_T4GE3

Part No SQD25N06-22L_T4GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQD25N06-22L_T4GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1975 pF @ 25 V
Power Dissipation (Max) 62W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD25
Other Names SQD25N06-22L_T4GE3CT,SQD25N06-22L_T4GE3,SQD25N06-22L_T4GE3DKR,SQD25N06-22L_T4GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277832-SQD25N06-22L_T4GE3
Ultra Librarian 3D Model Ultra Librarian SQD25N06-22L_T4GE3 CAD Model

Description

The SQD25N06-22L_T4GE3 is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Series: Automotive, AEC-Q101, TrenchFET series
  • Designed for: Use in automotive applications
  • Package: TO-252-3, DPak
  • Mounting: SMD (SMT) technology
  • Drain to Source Voltage: 60 V
  • Continuous Drain Current: 25A (Tc)
  • Maximum Power Dissipation: 62W (Tc)
  • Gate Charge: 50 nC @ 10 V
  • Suitable for: Use in various applications such as power management, motor control, and lighting

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