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Same model may have multiple batches, images only for reference.
SQD50N02-04L-GE3
Same model may have multiple batches, images only for reference.

SQD50N02-04L-GE3

Part No SQD50N02-04L-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package DPAK
Continuous Drain Current (ID) 50 A
Fall Time 9 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 175 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Packaging Tape & Reel
Radiation Hardening No
Rise Time 10 ns
RoHS Compliant
Turn-Off Delay Time 41 ns
Turn-On Delay Time 13 ns
Win Source Part Number 965607-SQD50N02-04L-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SQD50N02-04L-GE3 CAD Model

Description

The Vishay SQD50N02-04L-GE3 is a low-popularity, surface-mount MOSFET transistor with a maximum continuous drain current (ID) of 50 A and a gate-to-source voltage (Vgs) of 20 V.

  • Popularity: Low-popularity
  • Mount: Surface mount
  • Maximum Continuous Drain Current (ID): 50 A
  • Gate-to-Source Voltage (Vgs): 20 V
  • Turn-On Delay Time: 13 ns
  • Turn-Off Delay Time: 41 ns
  • Rise Time: 10 ns
  • Fall Time: 9 ns
  • Package: Tape and reel
  • Pins: Three
  • Operating Temperature: -55 to 175 °C
  • RoHS: Compliant

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