The Vishay Siliconix SQJ138EP-T1_GE3 MOSFET is a N-Channel FET that features a Drain to Source Voltage (Vdss) of 40 V.

• Vdss: 40 V
• Power Dissipation (Max): 312W (Tc)
• Mounting Type: Surface Mount
• Package: PowerPAK® SO-8
• Vgs (Max): ±20V
• Temperature Range: -55°C ~ 175°C (TJ)
• Series: Automotive, AEC-Q101, TrenchFET® Gen IV
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
• Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V