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FDB8443_F085

Part No FDB8443_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 25A TO-263AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 185nC @ 10V
Max Input Capacitance 9310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 188W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037984-FDB8443_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB8443_F085 CAD Model

Description

The Fairchild/ON Semiconductor FDB8443_F085 is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 25A at 25°C.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 25A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 185nC @ 10V
  • Package / Case: D2PAK (TO-263AB)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Rds On @ Id,Vgs: 5.5 mOhm @ 80A, 10V
  • Maximum Input Capacitance: 9310pF @ 25V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5874 $60.9858
40+ $2.9441 $117.7640
61+ $2.8517 $173.9537
84+ $2.7593 $231.7812
109+ $2.6681 $290.8229
145+ $2.3920 $346.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,500 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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