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SQJ262EP-T1_GE3

Part No SQJ262EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 15A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V, 1260pF @ 25V
Power - Max 27W (Tc), 48W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual Asymmetric
Base Product Number SQJ262
Other Names SQJ262EP-T1_GE3CT,SQJ262EP-T1_GE3DKR,SQJ262EP-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278527-SQJ262EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ262EP-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJ262EP-T1_GE3 is an electronic component used for discrete semiconductor products.

  • Manufacturer: Vishay Siliconix
  • Win Source Part Number: 1278527-SQJ262EP-T1_GE3
  • Package: PowerPAK SO-8 Dual
  • Mounting Type: SMD (SMT)
  • FET Type: 2 N-Channel (Dual)
  • Drain to Source Voltage (Vdss): 60V
  • Applications: Automotive, AEC-Q101, TrenchFET applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2108 $54.4860
105+ $0.9935 $104.3175
160+ $0.9624 $153.9840
215+ $0.9314 $200.2510
280+ $0.9003 $252.0840
375+ $0.8072 $302.7000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,998 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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