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Same model may have multiple batches, images only for reference.
SQJ460AEP-T2_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJ460AEP-T2_GE3

Part No SQJ460AEP-T2_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 58A PPAK SO-8 / N-Channel 60 V 58A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
SQJ460AEP-T2_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 10.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2654 pF @ 30 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ460
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SQJ460AEP-T2_GE3TR
Standard Package 3,000
Win Source Part Number 1095810-SQJ460AEP-T2_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ460AEP-T2_GE3 CAD Model

Description

The Vishay Siliconix SQJ460AEP-T2_GE3 is a MOSFET transistor that belongs to the automotive, AEC-Q101, TrenchFET series of electronic components.

  • Series: Automotive, AEC-Q101, TrenchFET
  • FET Type: N-Channel
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 58A @ 25°C
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10.7A, 10V
  • Package: PowerPAK® SO-8
  • Gate Charge: 106 nC @ 10 V
  • Input Capacitance: 2654 pF @ 30 Vds

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