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APT20M38SVFR

Part No APT20M38SVFR
Manufacturer Advanced Power Technology
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Sample
Rohs State rohs
ECAD Module
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Manufacturer Advanced Power Technology
Win Source Part Number 1146680-APT20M38SVFR
Manufacturer Homepage www.advpowertech.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT20M38SVFR CAD Model

Description

The APT20M38SVFR is a high-performance RF MOSFET from Advanced Power Technology (APT), designed for demanding applications requiring efficient and reliable power amplification. This device utilizes advanced silicon technology to deliver exceptional power gain, high breakdown voltage, and low on-resistance, making it suitable for a wide range of radio frequency applications.

Applications:

  • RF Power Amplifiers
  • High-Frequency Switching Power Supplies
  • Industrial Heating and Welding Equipment
  • Radio Transmitters
  • MRI Systems

Features:

  • High Breakdown Voltage: Ensures reliable operation in high-voltage environments.
  • Low On-Resistance (RDS(on)): Minimizes power losses and enhances efficiency.
  • Fast Switching Speed: Enables efficient operation at high frequencies.
  • High Power Gain: Provides excellent signal amplification.
  • RoHS Compliant: Environmentally friendly construction.

Benefits:

  • Improved System Efficiency: Reduces power consumption and heat generation.
  • Enhanced Reliability: Provides stable performance in demanding conditions.
  • Simplified Circuit Design: Facilitates easier integration into existing systems.
  • Reduced System Cost: Optimizes overall system cost by minimizing the need for additional components.
  • Extended Product Lifespan: Offers a long operational life, ensuring reliable performance over time.

Additional Details:

The APT20M38SVFR is typically supplied in a robust package designed for efficient heat dissipation. It is characterized by its ability to handle substantial power levels while maintaining excellent linearity and stability. Detailed specifications include breakdown voltage (VDS), on-resistance (RDS(on)), gate charge (Qg), and output capacitance (Coss). These parameters are crucial for optimizing the performance of RF power amplifiers and ensuring compliance with stringent regulatory requirements.

Proper thermal management is essential for maximizing the lifespan and performance of the APT20M38SVFR. Heatsinking and forced air cooling may be required depending on the specific application and operating conditions. Consult the manufacturer's datasheet for detailed thermal resistance specifications and recommended cooling techniques.

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