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SQJA72EP-T1_GE3

Part No SQJA72EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 37A PPAK SO-8 / N-Channel 100 V 37A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1390 pF @ 25 V
Power Dissipation (Max) 55W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA72
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1350145-SQJA72EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA72EP-T1_GE3 CAD Model

Description

The SQJA72EP-T1_GE3 is an N-channel MOSFET transistor that features a drain-to-source voltage of 100 V, continuous drain current of 37 A, and a maximum power dissipation of 55W.

  • Drain-to-Source Voltage: 100 V
  • Continuous Drain Current: 37 A
  • Maximum Power Dissipation: 55W
  • Package: Surface Mount
  • Standard Package: 3,000
  • Gate-Source Voltage: ±20V
  • Maximum Operating Temperature: -55°C to 175°C
  • Ideal for: Discrete Semiconductor Products such as Transistors, FETs, MOSFETs, and Single FETs applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0374 $50.9350
60+ $1.6717 $100.3020
93+ $1.6195 $150.6135
128+ $1.5672 $200.6016
166+ $1.5150 $251.4900
221+ $1.3583 $300.1843
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 88,692 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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