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SQJA76EP-T1_GE3

Part No SQJA76EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5250 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA76
Other Names SQJA76EP-T1_GE3TR,SQJA76EP-T1_GE3DKR,SQJA76EP-T1_GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277840-SQJA76EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA76EP-T1_GE3 CAD Model

Description

The SQJA76EP-T1_GE3 is an N-channel MOSFET transistor from the TrenchFET series by Vishay Siliconix.

  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 75A (Tc)
  • Maximum On-Resistance @ Drain Current, Gate-Source Voltage: 2.4mOhm @ 10A, 10V
  • Gate-Source Threshold Voltage @ Drain Current: 3.5V @ 250μA
  • Power Dissipation: 68W (Tc)
  • Mounting Technology: SMD (SMT)
  • Package/Case: PowerPAK® SO-8
  • Temperature Range: -55°C to 175°C (TJ)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9601 $52.8055
130+ $0.7878 $102.4140
200+ $0.7632 $152.6400
275+ $0.7386 $203.1150
355+ $0.7139 $253.4345
470+ $0.6401 $300.8470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,440 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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