The SQM100N04-2M7_GE3 from Vishay is an N-channel MOSFET designed for discrete semiconductor products.

• Channel Type: N-channel
• Case/Package: TO-263 (D2Pak)
• Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current @ 25°C: 100A (Tc)
• Gate-Source Threshold Voltage: 3.5V @ 250μA
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 2.7 mOhm @ 30A, 10V
• Maximum Input Capacitance: 7910pF @ 25V
• Maximum Gate Charge: 145nC @ 10V
• Supply and Demand Status: Balanced
• Maximum Power Dissipation (Max): 157W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Operating Temperature: -55°C to 175°C (TJ)