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SQM200N04-1M8_GE3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SQM200N04-1M8_GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SQM200N04-1M8_GE3 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	310 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	17350 pF @ 25 V
Power Dissipation (Max)	375W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	TO-263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number	SQM200
Standard Package	800
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277934-SQM200N04-1M8_GE3
Ultra Librarian 3D Model	Ultra Librarian SQM200N04-1M8_GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix SQM200N04-1M8_GE3 is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 40V and a continuous drain current (Id) of 200A @ 25°C.

Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation: 375W (Tc)
Package/Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25V
Operating Temperature Range: -55°C to 175°C (TJ)

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SQM200N04-1M8_GE3

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