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SQS160ELNW-T1_GE3 Real Image SQS160ELNW-T1_GE3 Vishay
Same model may have multiple batches, images only for reference.
SQS160ELNW-T1_GE3 Real Image SQS160ELNW-T1_GE3 Vishay
SQS160ELNW-T1_GE3 Real Image SQS160ELNW-T1_GE3 Vishay
Same model may have multiple batches, images only for reference.

SQS160ELNW-T1_GE3

Part No SQS160ELNW-T1_GE3
Manufacturer Vishay
Catalog FETs - Single
Description AUTOMOTIVE N-CHANNEL 60 V (D-S)
Datasheet
SQS160ELNW-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number 30000150-SQS160ELNW-T1_GE3
Manufacturer Vishay
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series Automotive, AEC-Q101, TrenchFET® Gen IV
Package Tape & Reel (TR) Cut Tape (CT)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 141A (Tc)
Drain to Source Voltage (Vdss) 60 V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Ultra Librarian 3D Model Ultra Librarian SQS160ELNW-T1_GE3 CAD Model

Description

The Vishay MOSFET is a N-Channel FET type transistor with a drain to source voltage of 60V and a continuous drain current rating of 141A @ 25°C.

  • Manufacturer: Vishay
  • Transistor Type: N-Channel FET
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 141A @ 25°C
  • Rds On (Max): 4.3mOhm @ 10A, 10V
  • Vgs(th) (Max): 2.5V @ 250µA
  • Application: Automotive
  • AEC-Q101 Compliant: Yes
  • Technology: TrenchFET® Gen IV
  • Packaging: Tape & Reel (TR) Cut Tape (CT)

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Quantity Unit Price Ext. Price
45+ €1.2761 €57.4259
100+ €1.0471 €104.7123
155+ €1.0145 €157.2452
215+ €0.9818 €211.0778
280+ €0.9490 €265.7281
370+ €0.8508 €314.8123
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