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SUB75N05-06

Part No SUB75N05-06
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFETs 50V 75A 250W
Sample
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ECAD Module
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Products specifications Report Issue?

Case / Package TO-263-3
Continuous Drain Current (ID) 75 A
Drain to Source Breakdown Voltage 50 V
Drain to Source Resistance 6 mΩ
Drain to Source Voltage (Vdss) 50 V
Element Configuration Single
Fall Time 20 ns
Gate to Source Voltage (Vgs) 20 V
Height 4.83 mm
Length 10.41 mm
Max Operating Temperature 175 °C
Max Power Dissipation 3.7 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Pins 3
Power Dissipation 3.7 W
Rise Time 20 ns
RoHS Non-Compliant
Turn-Off Delay Time 50 ns
Turn-On Delay Time 20 ns
Voltage Rating (DC) 50 V
Weight 329.988449 mg
Width 9.65 mm
Win Source Part Number 1181731-SUB75N05-06
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUB75N05-06 CAD Model

Description

The Vishay SUB75N05-06 is an N-Channel Power MOSFET designed for high-efficiency switching applications. It offers a low on-resistance and fast switching speed, making it suitable for various power management and motor control applications.

Applications

      
  • DC-DC Converters
  •   
  • Motor Control
  •   
  • Power Management
  •   
  • Load Switching
  •   
  • Synchronous Rectification

Features

      
  • N-Channel MOSFET
  •   
  • Low On-Resistance (RDS(on)): 0.006 Ohms at VGS = 10V
  •   
  • High Current Capability: Up to 75A
  •   
  • Fast Switching Speed
  •   
  • Low Gate Charge
  •   
  • Avalanche Rated
  •   
  • Lead (Pb)-free Available

Benefits

      
  • High Efficiency: Low on-resistance minimizes power dissipation, resulting in higher efficiency.
  •   
  • Fast Switching: Reduces switching losses and improves performance in high-frequency applications.
  •   
  • High Current Handling Capability: Suitable for high-current applications.
  •   
  • Simple Drive Requirements: Easy to drive with standard gate drive circuitry.
  •   
  • Robust Performance: Avalanche rating ensures reliable operation under transient conditions.
  •   
  • Reduced Heat Sink Requirements: Low on-resistance minimizes heat generation.
  •   
  • Environmentally Friendly: Lead (Pb)-free option available.

Technical Specifications

The SUB75N05-06 Power MOSFET is designed for optimal performance in switching applications. Its low on-resistance minimizes conduction losses, and its fast switching speed reduces switching losses. The high current capability allows it to handle demanding loads. The avalanche rating ensures reliable operation under transient voltage conditions. The device is available in a variety of packages to suit different application requirements. Vishay's commitment to quality ensures long-term reliability and performance.

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