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SUD50N10-18P-GE3

Part No SUD50N10-18P-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.2A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.2A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 2600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 136.4W (Tc)
Maximum Rds On at Id,Vgs 18.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 138865-SUD50N10-18P-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD50N10-18P-GE3 CAD Model

Description

The Vishay SUD50N10-18P-GE3 is a MOSFET transistor that comes in a TO-252 (D-Pak) package.

  • Maximum Power Dissipation: 3W (Ta) and 136.4W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25℃: 8.2A (Ta) and 50A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 75nC @ 10V
  • Maximum Input Capacitance: 2600pF @ 50V
  • Maximum Rds On: 18.5 mOhm @ 15A and 10V
  • Status: obsolete (EOL)
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2529 $58.1670
560+ $0.2079 $116.4240
865+ $0.2010 $173.8650
1,195+ $0.1940 $231.8300
1,535+ $0.1883 $289.0405
2,055+ $0.1686 $346.4730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,070 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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