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SUM40N10-30-E3

Part No SUM40N10-30-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 40A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Supply and Demand Status Balance
Popularity Medium
Win Source Part Number 1104118-SUM40N10-30-E3
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package TO-263 (D2Pak)
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 30 mOhm @ 15A, 10V
Power Dissipation (Max) 3.75W (Ta), 107W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 2400pF @ 25V
Max Gate Charge 60nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Continuous Drain Current at 25°C 40A (Tc)
Drain-Source Breakdown Voltage 100V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Reel - TR
Manufacturer Vishay
Categories Discrete Semiconductor Products
Ultra Librarian 3D Model Ultra Librarian SUM40N10-30-E3 CAD Model

Description

The Vishay SUM40N10-30-E3 is an N-Channel MOSFET transistor used in power electronic circuits.

  • Channel Type: N-Channel
  • Manufacturer: Vishay
  • Power Dissipation: 3.75W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 40A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 60nC @ 10V
  • Input Capacitance: 2400pF @ 25V
  • Package: TO-263 (D2Pak)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Application: Power supplies, motor control circuits, and other electronic devices that require high power switching.

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