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Same model may have multiple batches, images only for reference.
SUP33N20-60P-E3
Same model may have multiple batches, images only for reference.

SUP33N20-60P-E3

Part No SUP33N20-60P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, N, TO-220; Transistor type: TrenchFET; Voltage, Vds typ: 200V; Current, Id cont: 33A; Resistance, Rds on:...
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Continuous Drain Current (ID) 33 A
Drain to Source Breakdown Voltage 200 V
Drain to Source Resistance 60 mΩ
Drain to Source Voltage (Vdss) 200 V
Element Configuration Single
Fall Time 9 ns
Gate to Source Voltage (Vgs) 25 V
Maximum Operating Temperature 175 °C
Max Power Dissipation 3.12 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 3.12 W
Radiation Hardening No
REACH SVHC No SVHC
Rise Time 170 ns
RoHS Compliant
Threshold Voltage 4.5 V
Turn-Off Delay Time 26 ns
Turn-On Delay Time 16 ns
Win Source Part Number 965583-SUP33N20-60P-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SUP33N20-60P-E3 CAD Model

Description

The SUP33N20-60P-E3 is a power MOSFET transistor manufactured by Vishay.

  • Drain to Source Voltage (Vdss): 200 V
  • Continuous Drain Current (ID): 33 A
  • Gate to Source Voltage (Vgs): 25 V
  • Threshold Voltage: 4.5 V
  • Drain to Source Resistance: 60 mΩ
  • Turn-On Delay Time: 16 ns
  • Turn-Off Delay Time: 26 ns
  • Rise Time: 170 ns
  • Fall Time: 9 ns
  • Maximum Power Dissipation: 3.12 W
  • Maximum Operating Temperature: 175 °C
  • RoHS: Compliant

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