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Same model may have multiple batches, images only for reference.
SUP75N03-04-E3 Vishay
Same model may have multiple batches, images only for reference.

SUP75N03-04-E3

Part No SUP75N03-04-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A TO220AB
Datasheet
SUP75N03-04-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 250nC @ 10V
Max Input Capacitance 10742pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 187W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1104134-SUP75N03-04-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP75N03-04-E3 CAD Model

Description

The MOSFET from Vishay is a high-performance n-channel power MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 75A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 250nC @ 10V
  • Maximum Input Capacitance: 10742pF @ 25V
  • Maximum Rds On @ Id, Vgs: 4 mOhm @ 75A, 10V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: TO-220AB
  • Power Dissipation (max): 3.7W (Ta) and 187W (Tc)
  • Supply and Demand Status: balanced

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