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Same model may have multiple batches, images only for reference.
US1KHE3_A/H Real Image
Same model may have multiple batches, images only for reference.

US1KHE3_A/H

Part No US1KHE3_A/H
Manufacturer Vishay
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 800V 1A DO214AC / Diode Standard 800 V 1A Surface Mount DO-214AC (SMA)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Manufacturer Vishay General Semiconductor - Diodes Division
Packaging Reel - TR
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 10 µA @ 800 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz
Mounting Surface Mount
Case / Package DO-214AC, SMA
Supplier Device Package DO-214AC (SMA)
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number US1K
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number US1KHE3_A/H-ND,US1KHE3_A/HGIDKR,US1KHE3_A/HGITR,US1KHE3_A/HGICT
Standard Package 1,800
Win Source Part Number 1324029-US1KHE3_A/H
Ultra Librarian 3D Model Ultra Librarian US1KHE3_A/H CAD Model

Description

This electronic component is a fast recovery diode manufactured by Vishay General Semiconductor - Diodes Division.

  • Mounting: Surface Mount
  • Standard Package: 1,800
  • Diode Type: Standard
  • Maximum DC Reverse Voltage: 800 V
  • Average Rectified Current: 1A
  • Forward Voltage: 1.7 V @ 1 A
  • Reverse Recovery Time: 75 ns
  • Current Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Operating Temperature - Junction: -55°C ~ 150°C

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