The NCE65T260K is a high-performance N-channel MOSFET manufactured by Wuxi NCE Power Semiconductor. This MOSFET is engineered for efficient power switching and is commonly used in applications such as power adapters, LED lighting, and battery chargers. Its low on-resistance and fast switching capabilities contribute to improved system efficiency and thermal performance.

Applications

• Power adapters
• LED lighting drivers
• Battery chargers
• DC-DC converters
• Power tools

Features

• N-channel enhancement mode
• Low on-resistance (RDS(on))
• Fast switching speed
• Avalanche rated
• RoHS compliant
• TO-252 package

Benefits

• Reduced power losses due to low on-resistance, leading to higher efficiency.
• Improved thermal performance reduces the need for extensive heat sinking.
• Reliable operation in high-voltage and high-current applications.
• Compliant with environmental standards.

Technical Specifications

The NCE65T260K has a drain-source voltage (VDS) rating of 650V and a continuous drain current (ID) of 26A. The typical on-resistance (RDS(on)) is 0.26 Ohms at a gate-source voltage (VGS) of 10V. It features a gate threshold voltage (VGS(th)) between 2V and 4V. The MOSFET is packaged in a TO-252 package and is suitable for operating temperatures ranging from -55°C to +150°C. Its avalanche capability ensures robustness in demanding applications.