The NCEP85T12 is an N-channel enhancement mode power MOSFET from Wuxi NCE Power Semiconductor. It is designed for efficient power switching applications requiring low on-resistance and gate charge. It is well-suited for applications such as synchronous rectification, DC-DC converters, and power management.

Applications

• Synchronous Rectification
• DC-DC Converters
• Power Management
• Motor Control
• Load Switching

Features

• Low RDS(on) for reduced conduction losses
• Low Gate Charge (Qg) for minimized switching losses
• High Avalanche Energy
• Fast Switching Speed
• Lead-Free Package
• RoHS Compliant

Benefits

• Increased Efficiency in Power Conversion
• Reduced Heat Dissipation
• Improved System Reliability
• Simplified Thermal Management
• Compact Design

Technical Specifications

The NCEP85T12 is rated for a drain-source voltage (VDS) of 85V. The continuous drain current (ID) is approximately 12A, dependent on thermal conditions and packaging. Its on-resistance (RDS(on)) is typically around 9 mΩ at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) is typically between 1V and 3V. This MOSFET is available in TO-220 packages. The typical operating temperature range is from -55°C to +175°C. A low gate charge contributes to efficient switching at higher frequencies. It is designed with a high avalanche energy for increased robustness.

The low on-resistance minimizes conduction losses, improving overall efficiency. The low gate charge reduces the gate drive requirements and switching losses. The high avalanche energy rating enhances device robustness. The NCEP85T12 is a suitable choice for applications demanding high efficiency and reliable performance.