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Same model may have multiple batches, images only for reference.
MMDT5551
Same model may have multiple batches, images only for reference.

MMDT5551

Part No MMDT5551
Manufacturer Yangzhou yangjie electronic co., ltd
Catalog Transistors (BJT) - Arrays
Description SOT-363 NPN+NPN 0.2W 0.6A 180V T
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr Yangzhou yangjie electronic co., ltd
Package Tape & Reel
Product Status Active
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 150mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Power - Max 200mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number MMDT5551
Standard Package 3,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
Win Source Part Number 642582-MMDT5551
Ultra Librarian 3D Model Ultra Librarian MMDT5551 CAD Model

Description

The 642582-MMDT5551 is a dual NPN bipolar transistor array, suitable for use in discrete semiconductor products.

  • Maximum Power: 200mW
  • Collector-Emitter Breakdown Voltage: 160V
  • DC Current Gain: 100
  • Transition Frequency: 300MHz
  • Package: 6-TSSOP, SC-88, SOT-363

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,165+ $0.0158 $50.0070
6,760+ $0.0148 $100.0480
10,490+ $0.0143 $150.0070
15,040+ $0.0133 $200.0320
19,535+ $0.0128 $250.0480
24,395+ $0.0123 $300.0585
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,000 pieces
MOQ: 3165 pcs
Order Increment : 1 pcs
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