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YJL3415A

Part No YJL3415A
Manufacturer Yangzhou yangjie electronic co., ltd
Catalog Transistors - FETs, MOSFETs - RF
Description SOT-23 P 20V 5.6A  Transistors F
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Yangjie Technology
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 42mOhm @ 5.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.98 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
REACH Status REACH Unaffected
ECCN EAR99
Win Source Part Number 1376850-YJL3415A
Ultra Librarian 3D Model Ultra Librarian YJL3415A CAD Model

Description

The YJL3415A is a P-channel MOSFET transistor manufactured by Yangjie Technology.

  • Product Category: MOSFET (Metal Oxide)
  • Mounting Type: Surface Mount
  • Package: TO-236-3, SC-59, SOT-23-3
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 5.6A @ 25°C
  • Gate-Source Voltage: 1V @ 250μA
  • Gate Charge: 10.98nC @ 4.5V
  • Input Capacitance: 1010pF @ 10V
  • Product Status: Active
  • REACH Status: REACH Unaffected
  • ECCN: EAR99

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