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FZT857

Part No FZT857
Manufacturer Zetex Semiconductors
Description NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer Zetex Semiconductors
Win Source Part Number 1176329-FZT857
Manufacturer Homepage www.diodes.com/
Popularity Medium
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Description

The FZT857 is a high-performance PNP transistor manufactured by Zetex Semiconductors (now Diodes Incorporated). This transistor is designed for high-current, high-speed switching, and amplification applications. It's typically used in power management circuits, motor control, and other applications requiring a robust and efficient PNP transistor.

Applications:

  • Power management
  • Motor control
  • DC-DC converters
  • Load switching
  • Linear amplifiers

Features:

  • High collector current (IC = -3A continuous)
  • Low saturation voltage (VCE(sat))
  • High gain (hFE)
  • Fast switching speeds
  • SOT-223 package

Benefits:

  • High Current Capability: Handles significant current loads, suitable for driving various components.
  • Efficient Switching: Low saturation voltage minimizes power loss during switching.
  • High Gain: Provides sufficient amplification for signal processing and control.
  • Fast Switching: Enables high-frequency operation in switching applications.
  • Surface Mount Package: SOT-223 package allows for automated assembly and efficient heat dissipation.

The FZT857 features a high collector current rating, allowing it to drive substantial loads. Its low saturation voltage minimizes power dissipation when the transistor is fully turned on. The high DC current gain ensures sufficient amplification for various applications. The fast switching speeds enable efficient operation in high-frequency switching circuits. The SOT-223 package offers good thermal performance, facilitating heat dissipation and ensuring reliable operation. This transistor is widely used in power supplies, motor drivers, and other demanding applications.

The FZT857 is lead-free and RoHS compliant, meeting environmental standards. It is designed to operate over a wide temperature range. The transistor's robust construction ensures reliable performance in harsh environments. Its key electrical parameters include collector-emitter voltage (VCEO), collector current (IC), and DC current gain (hFE). Designers should consult the datasheet for detailed specifications and application guidelines.

Typical Electrical Characteristics:

  • Collector-Emitter Voltage (VCEO): -40V
  • Collector Current (IC): -3A
  • Base Current (IB): -500mA
  • Power Dissipation (Ptot): 2W (at Tamb = 25°C)
  • DC Current Gain (hFE): 100 (at IC = -1A, VCE = -1V)

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