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Same model may have multiple batches, images only for reference.
AP2R403GMT-HF-3TR
Same model may have multiple batches, images only for reference.

AP2R403GMT-HF-3TR

Part No AP2R403GMT-HF-3TR
Manufacturer Advanced Power Electronics Corp.
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet, Nch, 30V, 2.4MOHM, PMPAK5X6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 130 A
Drain to Source Resistance 2.4 mΩ
Drain to Source Voltage (Vdss) 30 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 62.5 W
Min Operating Temperature -55 °C
Number of Pins 8
REACH SVHC Unknown
RoHS Compliant
Win Source Part Number 1045364-AP2R403GMT-HF-3TR
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Advanced Power Electronics Corp.
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian AP2R403GMT-HF-3TR CAD Model

Description

The AP2R403GMT-HF-3TR is a high power N-channel enhancement mode MOSFET designed for use in high frequency RF applications.

  • Manufacturer: Advanced Power Electronics Corp.
  • Win Source Part Number: 1045364-AP2R403GMT-HF-3TR
  • Supply and Demand Status: shortage
  • Drain to Source Voltage (Vdss): 30V
  • Pins: 8
  • Maximum Operating Temperature: 150 degrees Celsius
  • RoHS compliant: Yes
  • Continuous Drain Current (ID): 130A

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