The AP9975M is a 30V P-Channel Enhancement-Mode MOSFET from Advanced Power Electronics Corp (APEC). It is designed for applications requiring efficient power switching and low on-resistance.

Applications

• Load Switching
• Power Management
• DC-DC Converters
• Battery Management Systems
• Motor Control

Features

• Low On-Resistance: RDS(ON) = 11 mΩ (typical) at VGS = -10V
• High Drain Current: ID = -25A
• Low Gate Charge
• Fast Switching Speed
• Logic Level Gate Drive
• Lead Free and RoHS Compliant
• Available in a SOP-8 package

Benefits

• Efficient power switching due to low on-resistance.
• High current handling capability allows for driving demanding loads.
• Fast switching speed reduces switching losses.
• Logic level gate drive simplifies interfacing with microcontrollers and other logic circuits.
• Environmentally friendly due to lead-free and RoHS compliance.

Technical Specifications

The AP9975M has a drain-source voltage (VDS) of -30V, a continuous drain current (ID) of -25A, and a pulsed drain current (IDM) of -80A. The gate-source voltage (VGS) is ±20V. The on-resistance (RDS(ON)) is typically 11 mΩ at VGS = -10V. The gate charge (Qg) is low, contributing to fast switching speeds. The operating temperature range is -55°C to +150°C. It is available in a SOP-8 package.