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AP9T16GJ

Part No AP9T16GJ
Manufacturer Advanced Power Electronics Corp.
Catalog Hard To Find
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Advanced Power Electronics Corp.
Win Source Part Number 1146255-AP9T16GJ
Manufacturer Homepage www.a-power.com.tw
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AP9T16GJ CAD Model

Description

The AP9T16GJ is a P-channel enhancement-mode power MOSFET from Advanced Power Electronics Corp. It is designed for applications requiring efficient power switching, particularly in load switching, power management, and DC-DC conversion circuits. This MOSFET offers low on-resistance and fast switching speeds, making it suitable for high-frequency operation.

Applications:

  • Load Switching: Used in various load switching applications due to its efficient switching characteristics.
  • Power Management: Integrated in power management systems for efficient voltage regulation and distribution.
  • DC-DC Converters: Employed in DC-DC converters to convert voltage levels efficiently.
  • Motor Control: Used in low power motor control circuits.
  • Battery Management Systems: Applied in battery management systems for charging and discharging control.

Features:

  • P-Channel Enhancement Mode: P-channel configuration simplifies gate drive circuitry in certain applications.
  • Low On-Resistance (RDS(on)): Reduces power loss and improves efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency circuits.
  • Low Gate Charge: Minimizes gate drive requirements.
  • High Avalanche Energy: Provides robustness against transient voltage spikes.

Benefits:

  • Improved Efficiency: Low on-resistance minimizes power dissipation, leading to improved efficiency.
  • Simplified Design: P-channel configuration can simplify gate drive circuits in specific applications.
  • Enhanced Reliability: High avalanche energy enhances the device's robustness.
  • Compact Size: Allows for integration into smaller form factor devices.
  • Reduced Heat Generation: Lower on-resistance results in reduced heat generation.

Specifications:

The AP9T16GJ typically features a drain-source voltage (VDS) of -30V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of -9A. The on-resistance (RDS(on)) is typically 16 mΩ at VGS = -10V. It is typically available in a TO-252 package. These parameters should be verified using the manufacturer's datasheet.

The device is designed to meet the demands of modern power electronics, offering a combination of efficiency, reliability, and compact size. It is RoHS compliant, reflecting a commitment to environmental responsibility.

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