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APT10M11B2VR

Part No APT10M11B2VR
Manufacturer Advanced Power Technology
Catalog Hard To Find
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Sample
Rohs State rohs
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Manufacturer Advanced Power Technology
Win Source Part Number 1146589-APT10M11B2VR
Manufacturer Homepage www.advpowertech.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT10M11B2VR CAD Model

Description

The APT10M11B2VR is a high-performance, 1000V, 11A Power MOS 8™ MOSFET from Microsemi (formerly Advanced Power Technology). This MOSFET is designed for high-voltage, high-speed switching applications. It offers superior ruggedness and reliability, making it suitable for demanding industrial and automotive environments.

Applications:

  • High-voltage power supplies
  • Motor control
  • Inverters
  • Solid-state relays
  • High-voltage DC-DC converters
  • Plasma displays
  • Induction heating

Features:

  • 1000V Breakdown Voltage: Suitable for high-voltage applications.
  • 11A Continuous Drain Current: Capable of handling significant current.
  • Low On-Resistance (RDS(on)): Reduces power dissipation and improves efficiency. Typically 0.95 Ohms.
  • Avalanche Energy Rated: Ensures robust performance under avalanche conditions.
  • Fast Switching Speed: Minimizes switching losses and improves system efficiency.
  • Isolated Substrate: Provides excellent thermal performance and simplifies mounting.
  • RoHS Compliant: Environmentally friendly and meets regulatory requirements.

Benefits:

  • High Reliability: Designed for robust performance in demanding environments.
  • High Efficiency: Low on-resistance minimizes power losses.
  • Simplified Thermal Management: Isolated substrate allows for efficient heat dissipation.
  • Improved System Performance: Fast switching speed enhances overall system efficiency.
  • Reduced Component Count: Avalanche energy rating eliminates the need for external protection circuitry in some applications.

Additional Details:

The APT10M11B2VR utilizes Microsemi's Power MOS 8™ technology, which provides excellent ruggedness and reliability. The isolated substrate allows for efficient heat transfer and simplifies mounting. The device is available in a variety of packages, including TO-247 and SOT-227. Its fast switching speed and low on-resistance make it an ideal choice for high-frequency switching applications. The MOSFET is also avalanche energy rated, providing additional protection against voltage transients. The device is well-suited for applications requiring high voltage and current capabilities, such as power supplies, motor control, and inverters.

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